DatasheetsPDF.com

2SA1633

Part Number	2SA1633
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jun 30, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA1633 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·High ...
Datasheet	2SA1633 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1633 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·High Power Dissipation ·High Current Capacity ·Complement to Type 2SC4278 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： ww...

Similar Datasheet

2SA1600 Switching Power Transistor - Shindengen Electric Mfg.Co.Ltd
2SA1600 SILICON POWER TRANSISTOR - SavantIC
2SA1600 POWER TRANSISTOR - Inchange Semiconductor
2SA1601 Switching Power Transistor - Shindengen Electric Mfg.Co.Ltd
2SA1601 SILICON POWER TRANSISTOR - SavantIC
2SA1601 POWER TRANSISTOR - Inchange Semiconductor
2SA1602 Silicon PNP Transistor - Isahaya Electronics
2SA1602A Silicon PNP Transistor - Isahaya Electronics Corporation
2SA1603 Silicon PNP Transistor - Isahaya Electronics
2SA1603A Silicon PNP Transistor - Isahaya Electronics

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)