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2SA1513

Part Number	2SA1513
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 1, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA1513 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High...
Datasheet	2SA1513 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1513 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High Currrent Capacity ·Low Collector Saturation Voltage- : VCE(sat)= -0.
5V(Max.
)@ IC= -12A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed and high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ 60 W 3.
5 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1513 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Colle...

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