DatasheetsPDF.com

2SA1490

Part Number	2SA1490
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 1, 2011
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min) ·Good Linearity...
Datasheet	2SA1490 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3854 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1490 isc website： www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Volta...

Similar Datasheet

2SA1400 PNP Transistor - NEC
2SA1400-Z PNP Transistor - NEC
2SA1400-Z Transistor - Kexin
2SA1400Z PNP Transistor - INCHANGE
2SA1402 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SA1403 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SA1404 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SA1405 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SA1406 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SA1407 PNP / NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)