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2SA1488

Part Number	2SA1488
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 1, 2011
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Ga...
Datasheet	2SA1488 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= -1A ·Complement to Type 2SC3851 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 25 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1488 isc website： www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; IB= 0 VCE(sat) Collector-Emitt...

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