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2SA1443

Part Number	2SA1443
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 1, 2011
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·High DC Cur...
Datasheet	2SA1443 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -2A) ·Low Saturation Voltage- : VCE(sat)= -0.
3V(Max)@ (IC= -6A, IB= -0.
3A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7.
0 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse -20 A IB Base Current-Continuous -5 A Total Power Dissipation @TC=25℃ 30 PT W Total Power Dissipation @Ta=25℃ 2.
0 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1443 isc website： www.
iscs...

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