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2SA1142

Inchange Semiconductor
Part Number 2SA1142
Manufacturer Inchange Semiconductor
Description POWER TRANSISTOR
Published Jul 4, 2011
Detailed Description isc Silicon PNP Power Transistor 2SA1142 DESCRIPTION ·Low Collector Saturation Voltage ·High voltage,fT ·Complement to...
Datasheet PDF File 2SA1142 PDF File

2SA1142
2SA1142

Overview
isc Silicon PNP Power Transistor 2SA1142 DESCRIPTION ·Low Collector Saturation Voltage ·High voltage,fT ·Complement to Type 2SC2682 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -100 mA 1.
2 w 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA VBE(sat) Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA ICBO...


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