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2SA1067

Part Number	2SA1067
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 4, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA1067 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Go...
Datasheet	2SA1067 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1067 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.
) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF amplifier, high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -15 A 100 W 150 ℃ Tstg Storage Temperature ...

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