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2SA1065

Part Number	2SA1065
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 4, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA1065 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Go...
Datasheet	2SA1065 PDF File

Overview

...od Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2489 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF amplifier, high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -15 A 120 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silico...

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