DatasheetsPDF.com

2SA913

Part Number	2SA913
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 4, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA913 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·Compl...
Datasheet	2SA913 PDF File

Overview

isc Silicon PNP Power Transistor 2SA913 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·Complement to Type 2SC1913 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF high power dirver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1.
5 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.
1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA; IC= 0 VCE(sat) ...

Similar Datasheet

2SA900 Silicon PNP Transistor - Panasonic Semiconductor
2SA900 PNP Transistor - INCHANGE
2SA900 Silicon POwer Transistors - SavantIC
2SA9012 Transistors - ETC
2SA9015 Transistors - ETC
2SA904 PNP Transistor - ETC
2SA904A PNP Transistor - ETC
2SA905 PNP Transistor - ETC
2SA907 (2SA907 - 2SA909) Silicon POwer Transistors - SavantIC
2SA907 POWER TRANSISTOR - Inchange Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)