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2SA766

Inchange Semiconductor
Part Number 2SA766
Manufacturer Inchange Semiconductor
Description POWER TRANSISTOR
Published Jul 4, 2011
Detailed Description isc Silicon PNP Power Transistor 2SA766 DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= -150V(Min) ·High Co...
Datasheet PDF File 2SA766 PDF File

2SA766
2SA766

Overview
isc Silicon PNP Power Transistor 2SA766 DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= -150V(Min) ·High Collector Power Dissipation·Complement to Type 2SC1450 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Line-operated vertical deflection output ·Medium power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.
4 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1.
2 A 20 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA766 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CER Collector-Emitter Breakdown Voltage IC= -0.
2A; L= 25mH, RBE= 5kΩ -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.
1A -1.
0 V VBE(on)-1 Base-Emitter On Voltage IC= -0.
1A; VCE= -5V -0.
8 V VBE(on)-2 Base-Emitter On Voltage IC= -0.
5A; VCE= -5V -1.
0 V ICBO Collector Cutoff Current VCB= -60V; IE= 0 -30 μA hFE-1 DC Current Gain IC= -0.
1A; VCE= -5V 35 150 hFE-2 DC Current Gain IC= -0.
5A; VCE= -5V 35 fT Current-Gain—Bandwidth Product IE= 0.
1A; VCB= -10V 15 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace i...


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