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2SA756

Part Number	2SA756
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 4, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA756 DESCRIPTION ·High Power Dissipation- : PC= 50W(Max.)@TC=25℃ ·Collector-Emitter...
Datasheet	2SA756 PDF File

Overview

isc Silicon PNP Power Transistor 2SA756 DESCRIPTION ·High Power Dissipation- : PC= 50W(Max.
)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.
) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier power output stage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -10 A 50 W 150 ℃ Tstg St...

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