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2SA747

Part Number	2SA747
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 4, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA747 DESCRIPTION ·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitte...
Datasheet	2SA747 PDF File

Overview

isc Silicon PNP Power Transistor 2SA747 DESCRIPTION ·High Power Dissipation- : PC= 100W(Max.
)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.
) ·Complement to Type 2SC1116 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -4 A 100 W 150 ℃ Tstg Storage Temperatu...

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