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2SA2151

Part Number	2SA2151
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 4, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA2151 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) ·...
Datasheet	2SA2151 PDF File

Overview

isc Silicon PNP Power Transistor 2SA2151 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC6011 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 160 W 150 ℃ Tstg Storage Temperature Range -...

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