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2SA1659

Inchange Semiconductor
Part Number 2SA1659
Manufacturer Inchange Semiconductor
Description POWER TRANSISTOR
Published Jul 4, 2011
Detailed Description INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1659 DESCRIPTION ·High Collector-Emitter Breakdown Voltage...
Datasheet PDF File 2SA1659 PDF File

2SA1659
2SA1659

Overview
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1659 DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) ·Complement to Type 2SC4370 ·Full-mold package that does not require an insulating board or bushing when mounting.
·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5.
0 V IC(DC) Collector Current(DC) -1.
5 A IB(DC) PC TJ Base Current Collector Power Dissipation @TC=25℃ Junction Temperature ...


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