DatasheetsPDF.com

2SB929A

Panasonic Semiconductor
Part Number 2SB929A
Manufacturer Panasonic Semiconductor
Description Power Transistors
Published Jul 7, 2011
Detailed Description Power Transistors 2SB0929 (2SB929), 2SB0929A (2SB929A) www.DataSheet4U.net Silicon PNP epitaxial planar type For power...
Datasheet PDF File 2SB929A PDF File

2SB929A
2SB929A

Overview
Power Transistors 2SB0929 (2SB929), 2SB0929A (2SB929A) www.
DataSheet4U.
net Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1252, 2SD1252A 8.
5±0.
2 Unit: mm 3.
4±0.
3 1.
0±0.
1 6.
0±0.
2 10.
0±0.
3 1.
5±0.
1 ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
4.
4±0.
5 Parameter Collector-base voltage (Emitter open) 2SB0929 2SB0929A Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Rating −60 −80 −60 −80 −5 −3 −5 35 1.
3 150 −55 to +150 Unit V 1 2 2.
0±0.
5 ■ Absolute Maximum Ratings TC = 25°C Collector-emitter voltage 2SB0929 (Base open) 2SB0929A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation V (6.
5) V A A W °C °C 1: Base 2: Collector 3: Emitter N-G1 Package Note) Self-supported type package is also prepared.
Junction temperature Storage temperature ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Base open) 2SB0929 2SB0929A 2SB0929 2SB0929A 2SB0929 2SB0929A IEBO hFE1 * Symbol VCEO ICES ICEO Conditions IC = −30 mA, IB = 0 VCE = −60 V, VBE = 0 VCE = −80 V, VBE = 0 VCE = −30 V, IB = 0 VCE = −60 V, IB = 0 VEB = −5 V, IC = 0 VCE = −4 V, IC = −1 A VCE = −4 V, IC = −3 A VCE = −4 V, IC = −3 A IC = −3 A, IB = −0.
375 A VCE = −10 V, IC = − 0.
5 A, f = 10 MHz IC = −1 A, IB1 = − 0.
1 A, IB2 = 0.
1 A VCC = −50 V Min −60 −80 Typ Max (7.
6) Unit V −200 −200 −300 −300 −1 70 10 −1.
8 −1.
2 30 0.
5 1.
2 0.
3 250 µA µA mA  V V MHz µs µs µs Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE2 Base-emitter voltage Collector-emitter saturation voltage Transition frequency Turn-on time Strage time Fall time VBE VCE(sat) fT ton tstg tf ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)