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2SA778K

Hitachi Semiconductor
Part Number 2SA778K
Manufacturer Hitachi Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description 2SA778(K), 2SA778A(K) Silicon PNP Epitaxial Application High voltage medium speed switching Outline TO-92 (1) 1. Emit...
Datasheet PDF File 2SA778K PDF File

2SA778K
2SA778K

Overview
2SA778(K), 2SA778A(K) Silicon PNP Epitaxial Application High voltage medium speed switching Outline TO-92 (1) 1.
Emitter 2.
Collector 3.
Base 3 2 1 2SA778(K), 2SA778A(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SA778(K) –150 –150 –5 –50 200 150 –55 to +150 2SA778A(K) –180 –180 –5 –50 200 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) 2SA778(K) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CER I CBO Min Typ Max — — –1.
0 — –1.
0 — –1.
0 2SA778A(K) Min Typ Max — — — –1.
0 –1.
0 200 –1.
0 V V pF MHz ns µs µs Unit V V µA µA µA Test conditions I C = –50 µA, IE = 0 I C = –50 µA, RBE = 30 kΩ VCB = –100 V, IE = 0 VCB = –150 V, IE = 0 VEB = –5 V, IC = 0 VCE = –3 V, I E = –15 mA I C = –15 mA, I B = –1 mA I C = –15 mA, I B = –1 mA VCB = –10 V, IE = 0, f = 1 MHz VCE = –3 V, I C = –15 mA VCC = –10.
3 V I C = 10 IB1 = –10 I B2 = –10 mA VCC = –10 V, I C =–17 mA IB1 = –1mA, I B2 = –12 mA –150 — –150 — — — — — — 100 –0.
3 –180 — –180 — — — — 40 — — — — — — — — — — 100 –0.
3 Emitter cutoff current I EBO — 30 — — — — — — — DC current transfer ratio hFE Collector to emitter saturation voltage Base to emitter saturation voltage Collector output capacitance VCE(sat) VBE(sat) Cob –0.
77 –1.
0 — 50 135 1.
7 — 10 — — — 1.
0 –0.
77 –1.
0 — 50 135 1.
7 — 10 — — — 1.
0 Gain bandwidth product f T Turn on time Turn off time Storage time t on t off t stg 2 2SA778(K), 2SA778A(K) Switching Time Test Circuit Switching Time Test Circuit ton, toff Test Circuit D.
U.
T.
6k 6k 0.
002 0.
002 CRT 1k P.
G.
tr, tf ≤ 5ns PW ≥ 5µs duty ratio = 50% tstg Test Circuit 510 D.
U.
T 0.
1 2.
4 k 50 – –3 V 50 + + 50 – 0.
002 0.
002 0.
1 CRT 16 P.
G.
tr, tf ≤ 15ns PW ≤ 5µs duty ratio ≤ 10% 50 + 6V 50 – + 50 – –10.
3 V ...


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