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2SB1015

Toshiba Semiconductor
Part Number 2SB1015
Manufacturer Toshiba Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description : SILICON PNP TRIPLE DIFFUSED TYPE 1 2SB1015 AUDIO FREQUENCY POWER AMPLIFIE R APPLICATIONS. 10.3MAX. Unit in mm FEA...
Datasheet PDF File 2SB1015 PDF File

2SB1015
2SB1015

Overview
: SILICON PNP TRIPLE DIFFUSED TYPE 1 2SB1015 AUDIO FREQUENCY POWER AMPLIFIE R APPLICATIONS.
10.
3MAX.
Unit in mm FEATURES .
Low Collector Saturation Vol tage : VC E(sat)=-1.
0V(Max.
) at Ic=-3A, I B=-0.
3A .
Collector Power Dissipation : Pc=25W (Tc=25°C) .
Complementary to 2SD1406 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VCBO VcEO VEBO ic RATING -60 -60 -7 -3 UNIT V V V A 7-0 03.
2±Q.
2 /.
1 , *JJ ^frf "* r X < Hrf, o s to .
.
.
1 1.
4 + 0.
25 0.
76-0.
15 ,| 1 2.
54±0.
25 J 1.
2 55 M s CO 2.
54±a25 mNoH C5c> + lO c5] 11 r1 12 3 < 5 c\? _1 _ .
:: ^ Base Current Collector Power Dissi...


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