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2SB1030

Panasonic Semiconductor
Part Number 2SB1030
Manufacturer Panasonic Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423...
Datasheet PDF File 2SB1030 PDF File

2SB1030
2SB1030

Overview
Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 4.
0±0.
2 3.
0±0.
2 s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1030 2SB1030A 2SB1030 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol (Ta=25˚C) Ratings –30 –60 –25 –50 –7 –1 – 0.
5 300 150 –55 ~ +150 Unit marking +0.
2 0.
45–0.
1 0.
7±0.
1 15.
6±0.
5 Optimum for high-density mounting.
Allowing supply with the radial taping.
V 1 2 3 emitter voltage 2SB1030A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V 1.
27 1.
27 V A A mW ˚C ˚C 1:Emitter 2:Collector 3:Base 2.
54±0.
15 EIAJ:SC–72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SB1030 2SB1030A 2SB1030 2SB1030A (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) fT Cob Conditions VCB = –20V, IE = 0 VCE = –20V, IB = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA*2 VCE = –10V, IC = –500mA*2 IC = –300mA, IB = –30mA*2 VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz –30 –60 –25 –50 –7 85 40 – 0.
35 200 6 *2 min typ max – 0.
1 –1 2.
0±0.
2 Unit µA µA V V V 340 Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance – 0.
6 V MHz 15 pF Pulse measurement *1h FE1 Rank classification Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC — Ta 500 –1200 Ta=25˚C 450 –1000 2SB1030, 2SB1030A IC — VCE –100 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 Collector power dissipation PC (mW) –30 –10 –3 –1 Ta=–25˚C 25˚C 75˚C 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Collector current IC (mA) 400 –800 IB=–10mA –9mA –8mA –7mA –6mA –5mA –4mA –3mA –2mA –1mA –600 –40...


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