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2SB1032

Hitachi Semiconductor
Part Number 2SB1032
Manufacturer Hitachi Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description 2SB1032(K) Silicon PNP Triple Diffused Application Power switching complementary pair with 2SD1436(K) Outline TO-3P 2...
Datasheet PDF File 2SB1032 PDF File

2SB1032
2SB1032

Overview
2SB1032(K) Silicon PNP Triple Diffused Application Power switching complementary pair with 2SD1436(K) Outline TO-3P 2 1 1.
Base 2.
Collector (Flange) 3.
Emitter ID 1.
0 kΩ (Typ) 200 Ω (Typ) 3 1 2 3 2SB1032(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current C to E diode forward current Collector power dissipation Junction temperature Storage temperature Note: 1.
Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) ID* 1 1 Rating –120 –120 –7 –10 –15 10 80 150 –55 to +150 Unit V V V A A A W °C °C PC * Tj Tstg Electrical Characteristics (Ta = 25°C) Item Symbol Min –120 –7 — — 1000 — — — — — — — Typ — — — — — — — — — — 0.
8 4.
0 Max — — –100 –10 20000 –1.
5 –3.
0 –2.
0 –3.
5 3.
0 — — V V V V V µs µs Unit V V µA µA Test conditions I C = –25 mA, RBE = ∞ I E = –200 mA, IC = 0 VCB = –120 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –5 A*1 I C = –5 A, IB = –10 mA*1 I C = –10 A, IB = –0.
1 A*1 I C = –5 A, IB = –10 mA*1 I C = –10 A, IB = –0.
1 A*1 I D = 10 A*1 VCC = –30 V, I C = –5 A, IB1 = –IB2 = –10 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1.
Pulse test hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t off 2 2SB1032(K) Maximum Collector Dissipation Curve 100 Collector power dissipation Pc (W) –30 –10 –3 DC Area of Safe Operation iC (peak) 0 10 1 µs Collector Current IC (A) 80 IC (max) PW µs 1 s m 60 = ) ms °C 10 25 = –1.
0 –0.
3 –0.
1 –0.
03 –3 Ta = 25°C 1 Shot pulse (T C 40 20 0 50 100 Case Temperature TC (°C) 150 –10 –30 –100 –300 Collector to emitter Voltage VCE (V) –10 DC current transfer ratio hFE Typical Output Characteristics Pc =8 .
5 0W –1 –0.
9 –1.
0 DC Current Transfer Ratio ...


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