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B1417

Panasonic Semiconductor
Part Number B1417
Manufacturer Panasonic Semiconductor
Description 2SB1417
Published Aug 23, 2011
Detailed Description www.DataSheet4U.net Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Comp...
Datasheet PDF File B1417 PDF File

B1417
B1417

Overview
www.
DataSheet4U.
net Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A Unit: mm s Features q q q Parameter Collector to base voltage Collector to 2SB1417 2SB1417A 2SB1417 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –6 –5 –3 15 2.
0 150 –55 to +150 Unit V 2.
5±0.
2 s Absolute Maximum Ratings 13.
0±0.
2 4.
2±0.
2 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping (TC=25˚C) 5.
0±0.
1 10.
0±0.
2 1.
0 90° 1.
2±0.
1 C1.
0 2.
25±0.
2 18.
0±0.
5 Solder Dip 0.
35±0.
1 0.
65±0.
1 1.
05±0.
1 0.
55±0.
1 emitter voltage 2SB1417A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 0.
55±0.
1 C1.
0 1 2 3 2.
5±0.
2 2.
5±0.
2 1:Base 2:Collector 3:Emitter MT4 Type Package s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1417 2SB1417A 2SB1417 2SB1417A 2SB1417 2SB1417A (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = –60V, VBE = 0 VCE = –80V, VBE = 0 VCE = –30V, IB = 0 VCE = –60V, IB = 0 VEB = –6V, IC = 0 IC = –30mA, IB = 0 VCE = –4V, IC = –1A VCE = –4V, IC = –3A VCE = –4V, IC = –3A IC = –3A, IB = – 0.
375A VCE = –5V, IC = – 0.
2A, f = 10MHz IC = –1A, IB1 = – 0.
1A, IB2 = 0.
1A, VCC = –50V 30 0.
3 1.
0 0.
2 –60 –80 70 10 –1.
8 –1.
2 V V MHz µs µs µs 250 min typ max –100 –100 –100 –100 –100 Unit µA µA µA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification.
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