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A1013

Toshiba Semiconductor
Part Number A1013
Manufacturer Toshiba Semiconductor
Description 2SA1013
Published Sep 26, 2011
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1013 Color TV Verttical Deflection Output Applications Po...
Datasheet PDF File A1013 PDF File

A1013
A1013

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1013 Color TV Verttical Deflection Output Applications Power Switching Applications 2SA1013 Unit: mm • High voltage: VCEO = −160 V • Large continuous collector current capability • Recommended for vertical deflection output & sound output applications for line-operated TV.
• Complementary to 2SC2383.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −160 V −160 V −6 V −1 A −0.
5 A 900 mW 150 °C −55 to 150 °C JEDEC JEITA TOSHIBA TO-92MOD ― 2-5J1A Note: Using continuously under heavy loads (e.
g.
the application of high Weight: 0.
36 g (typ.
) temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2006-11-09 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = −150 V, IE = 0 IEBO VEB = −6 V, IC = 0 V (BR) CEO IC = −10 mA, IB = 0 hFE (Note) VCE = −5 V, IC = −200 mA VCE (sat) IC = −500 mA, IB = −50 mA VBE VCE = −5 V, IC = −5 mA fT VCE = −5 V, IC = −200 mA Cob VCB = −10 V, IE = 0, f = 1 MHz Note: hFE classification R: 60 to 120, O...


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