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2SB834

Inchange Semiconductor
Part Number 2SB834
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistors
Published Nov 28, 2011
Detailed Description isc Silicon PNP Power Transistor 2SB834 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low C...
Datasheet PDF File 2SB834 PDF File

2SB834
2SB834

Overview
isc Silicon PNP Power Transistor 2SB834 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.
0V(Max) @IC= -3.
0A ·Complementary to 2SD880 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3.
0 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.
5 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 4.
16 ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB834 ELECTRICAL...


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