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2SB834

Weitron Technology
Part Number 2SB834
Manufacturer Weitron Technology
Description PNP Silicon Epitaxial Power Transistor
Published Nov 28, 2011
Detailed Description www.DataSheet.co.kr 2SB834 PNP Silicon Epitaxial Power Transistor P b Lead(Pb)-Free Features: * DC Current Gain hFE = 6...
Datasheet PDF File 2SB834 PDF File

2SB834
2SB834

Overview
www.
DataSheet.
co.
kr 2SB834 PNP Silicon Epitaxial Power Transistor P b Lead(Pb)-Free Features: * DC Current Gain hFE = 60-200 @IC = 0.
5A * Low VCE(sat) ≤ 1.
0V(MAX) @IC = 3.
0A, IB = 0.
3A * Complememtary to NPN 2SD880 COLLECTOR 2 BASE 1 1 2 3 3 EMITTER 1.
BASE 2.
COLLECTOR 3.
EMITTER TO-220 Unit V V V A W W/˚C ˚C ˚C ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TA=25°C TC=25°C Derate above 25°C Symbol VCBO VCEO VEBO IC PD TJ Tstg Value -60 -60 -7.
0 -3.
0 1.
5 30 0.
24 +150 -55 to +150 Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=-100µA, IE =0 Collector-Emitter Breakdown Voltage IC=-50mA, IB =0 Emitter-Base Breakdown Voltage IE=-100µA, IC =0 Collector Cut-Off Current VCB=-60V, IE=0 Emitter-Cut-Off Current VEB=-7V, IC=0 Symbol BVCBO BVCEO BVEBO ICBO IEBO Min -60 -60 Max Max Unit V V -7.
0 - - -...


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