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2SB789

Panasonic Semiconductor
Part Number 2SB789
Manufacturer Panasonic Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description Transistor 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2S...
Datasheet PDF File 2SB789 PDF File

2SB789
2SB789

Overview
Transistor 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD968 and 2SD968A Unit: mm s Features q q 2.
6±0.
1 4.
5±0.
1 1.
6±0.
2 1.
5±0.
1 0.
4max.
45° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB789 2SB789A 2SB789 VCBO VCEO VEBO ICP IC PC* Tj Tstg Symbol (Ta=25˚C) 1.
0–0.
2 +0.
1 Ratings –100 –120 –100 –120 –5 –1 –0.
5 1 150 –55 ~ +150 Unit V 0.
4±0.
08 0.
5±0.
08 1.
5±0.
1 3.
0±0.
15 3 2 1 4.
0–0.
20 0.
4±0.
04 emitter voltage 2SB789A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V marking V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : D(2SB789) E(2SB789A) Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.
7mm for the collector portion s Electrical Characteristics Parameter Collector to emitter voltage 2SB789 2SB789A (Ta=25˚C) Symbol VCEO VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA VCE = –5V, IC = –500mA IC = –500mA, IB = –50mA IC = –500mA, IB = –50mA VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min –100 –120 –5 90 50 – 0.
2 – 0.
85 120 30 – 0.
6 –1.
2 V V MHz pF 220 typ max Unit V V Collector to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *h FE1 Rank classification Rank hFE1 Q 90 ~ 155 2SB789 2SB789A DQ EQ R 130 ~ 220 DR ER Marking Symbol 2.
5±0.
1 +0.
25 High collector to emitter voltage VCEO.
Large collector power dissipation PC.
1 Transistor PC — Ta 1.
4 2SB789, 2SB789A IC — VCE –1.
2 Ta=25˚C –1.
0 –18mA –16mA –14mA IB=–20mA –12mA –10mA – 0.
8mA – 0.
6mA – 0.
4mA –1.
0 –1.
2 VCE=–10V Ta=25˚C IC — I B Collector power dissipation PC (W) 1.
2 Printed circut board: Copper foil area of 1cm2 or mo...


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