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2SB819

Panasonic Semiconductor
Part Number 2SB819
Manufacturer Panasonic Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description Transistor 2SB819 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1051 6.9...
Datasheet PDF File 2SB819 PDF File

2SB819
2SB819


Overview
Transistor 2SB819 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1051 6.
9±0.
1 1.
5 2.
5±0.
1 1.
0 1.
0 2.
4±0.
2 2.
0±0.
2 3.
5±0.
1 Unit: mm s Features q q q 1.
5 R0.
9 R0.
9 0.
85 0.
55±0.
1 0.
45±0.
05 1.
25±0.
05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings –50 –40 –5 –3 –1.
5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter 2.
5 2.
5 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg EIAJ:SC–71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.
7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO IEBO VCBO VCEO hFE *1 Conditions VCB = –20V, IE = 0 VCE = –10V, IB = 0 VEB = –5V, IC = 0 IC = –1mA, IE = 0 IC = –2mA, IB = 0 VCE = –5V, IC = IC = –2A, IB = –1A*2 IC = –1.
5A, IB = –0.
15A*2 –0.
2A*2 VCB = –5V, IE = 0.
5A, f = 200MHz VCB = –20V, IE = 0, f = 1MHz min typ max –1 –100 –10 –50 –40 80 220 –1 –1.
5 150 45 *2 4.
1±0.
2 High collector to emitter voltage VCEO.
Large collector power dissipation PC.
M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
0.
4 1.
0±0.
1 R 0.
4.
5±0.
1 7 Unit µA µA µA V V VCE(sat) VBE(sat) fT Cob V V MHz pF Pulse measurement *1h FE Rank classification Q 80 ~ 160 R 120 ~ 220 Rank hFE 1 Transistor PC — Ta 1.
2 –4.
0 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.
7mm for the collector portion.
–3.
5 2SB819 IC — VCE Collector to...


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