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2SB831

Hitachi Semiconductor
Part Number 2SB831
Manufacturer Hitachi Semiconductor
Description Silicon PNP Epitaxial Transistor
Published Mar 22, 2005
Detailed Description 2SB831 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline MPAK 3 1...
Datasheet PDF File 2SB831 PDF File

2SB831
2SB831

Overview
2SB831 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline MPAK 3 1 2 1.
Emitter 2.
Base 3.
Collector 2SB831 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings –25 –20 –5 –0.
7 –1 150 150 –55 to +150 Unit V V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE* 1 Min –25 –20 –5 — 85 — — Typ — — — — — — — Max — — — –1.
0 240 –0.
5 –1.
0 Unit V V V µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB ...


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