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2SB873

Panasonic Semiconductor
Part Number 2SB873
Manufacturer Panasonic Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description Transistor 2SB873 Silicon PNP epitaxial planer type For low-frequency power amplification For DC-DC converter For strob...
Datasheet PDF File 2SB873 PDF File

2SB873
2SB873

Overview
Transistor 2SB873 Silicon PNP epitaxial planer type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 5.
9± 0.
2 4.
9± 0.
2 s Features q q +0.
3 +0.
2 2.
54± 0.
15 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –30 –20 –7 –10 –5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 0.
45–0.
1 1.
27 13.
5± 0.
5 0.
7–0.
2 Low collector to emitter saturation voltage VCE(sat).
Large collector current IC.
0.
7± 0.
1 8.
6± 0.
2 0.
45–0.
1 1.
27 +0.
2 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO IEBO VCEO VEBO hFE*1 VCE(sat) fT Cob Conditions VCB = –10V, IE = 0 VEB = –5V, IC = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –2A*2 IC = –3A, IB = –0.
1A*2 VCB = –6V, IE = 50mA, f = 200MHz VCB = –20V, IE = 0, f = 1MHz *2 min typ 3.
2 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package max –100 –100 Unit nA nA V V –20 –7 90 625 –1 120 85 V MHz pF Pulse measurement *1h FE Rank classification P 90 ~ 135 Q 120 ~ 205 R 180 ~ 625 Rank hFE 1 Transistor PC — Ta 1.
2 –6 Ta=25˚C IB=–40mA 1.
0 –5 –35mA –30mA –25mA –4 –20mA –15mA –10mA –2 –5mA –1 –1mA 0 0 20 40 60 80 100 120 140 160 0 0 –2 –4 –6 –8 –10 –12 0 0 – 0.
4 – 0.
8 –10 2SB873 IC — VCE –12 VCE=–2V 25˚C IC — VBE Collector power dissipation PC (W) Collector current IC (A) Collector current IC (A) Ta=75˚C –8 –25˚C 0.
8 0.
6 –3 –6 0.
4 –4 0.
2 –2 –1.
2 –1.
6 –2.
0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(...


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