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GC9981

Microsemi Corporation
Part Number GC9981
Manufacturer Microsemi Corporation
Description (GC9981 - GC9989) Schottky Barrier Diodes
Published Dec 28, 2011
Detailed Description www.DataSheet.co.kr GC9981 – GC9989 TM ® Schottky Barrier Diodes Ultra High Drive Monolithic RoHS Compliant DESCRIPT...
Datasheet PDF File GC9981 PDF File

GC9981
GC9981

Overview
www.
DataSheet.
co.
kr GC9981 – GC9989 TM ® Schottky Barrier Diodes Ultra High Drive Monolithic RoHS Compliant DESCRIPTION Microsemi’s Schottky Barrier devices are currently available in the eight junction ring quad configuration.
Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages.
Monolithic devices are recommended for highest frequency, broadband designs.
The beamlead design eliminates the problems associated with wire bonding very small junction devices thus improving reliability and performance in MIC applications.
Our in house epitaxy process capability insures repeatability for lowest conversion loss through Ku Band.
A broad range of unique metallization schemes produce Microsemi’s complete line of barrier heights.
Diodes are available with barrier heights ranging from 600 mV to 1300 mV per leg.
By optimizing epitaxy and metallization, these devices achieve lowest Rs-Cj products resulting in exceptional conversion los...


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