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ATP213

Sanyo Semicon Device
Part Number ATP213
Manufacturer Sanyo Semicon Device
Description N-Channel Silicon MOSFET
Published Dec 28, 2011
Detailed Description www.DataSheet.co.kr Ordering number : ENA1526 ATP213 SANYO Semiconductors DATA SHEET ATP213 Features • • • • • N-C...
Datasheet PDF File ATP213 PDF File

ATP213
ATP213

Overview
www.
DataSheet.
co.
kr Ordering number : ENA1526 ATP213 SANYO Semiconductors DATA SHEET ATP213 Features • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance.
Large current.
Slim package.
4V drive.
Halogen free compliance.
Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 60 ±20 50 150 50 150 --55 to +150 37 25 Unit V V A A W °C °C mJ A Note : *1 VDD=10V, L=100μH, IAV=25A *2 L≤100μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V...


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