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2SC1473

Panasonic Semiconductor
Part Number 2SC1473
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC1473, 2SC1473A Silicon NPN triple diffu...
Datasheet PDF File 2SC1473 PDF File

2SC1473
2SC1473

Overview
Transistors This product complies with the RoHS Directive (EU 2002/95/EC).
2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 5.
0±0.
2 Unit: mm 4.
0±0.
2 5.
1±0.
2 / ■ Features • High collector-emitter voltage (Base open) VCEO e • High transition frequency fT c tage.
■ Absolute Maximum Ratings Ta = 25°C n d le s Parameter Symbol Rating Unit 0.
7±0.
2 12.
9±0.
5 a e cyc Collector-base voltage 2SC1473 VCBO 250 V life (Emitter open) 2SC1473A 300 n u uct Collector-emitter voltage 2SC1473 VCEO 200 V rod (Base open) 2SC1473A 300 2.
3±0.
2 te tin r P Emitter-base voltage (Collector open) VEBO 7 V fou Collector current IC 70 mA ing type n.
Peak collector current ICP 100 mA in n llow ce atio Collector power dissipation PC 750 mW fo an pe ed rm Junction temperature Tj 150 °C a o ludes inten ce ty d typ t info /en/ Storage temperature Tstg −55 to +150 °C 0.
7±0.
1 0.
45+–00.
.
115 2.
5+–00.
.
26 2.
5+–00.
.
26 0.
45+–00.
.
115 1 23 EIAJ: SC-43A 1: Emitter 2: Collector 3: Base TO-92-B1 Package c ued incned maintenanontinued type t lates .
co.
jp ■ Electrical Characteristics Ta = 25°C ± 3°C M is tin la a isc ue ou nic Parameter Symbol Conditions Min Typ Max Unit on p m d d ntin ab aso Collector-emitter voltage 2SA1473 VCEO IC = 100 µA, IB = 0 200 V isc ne co RL an (Base open) 2SA1473A 300 e/D pla dis ing U on.
p Emitter-base voltage (Collector open) VEBO IE = 1 µA, IC = 0 7 D c w ic Collector-emitter cutoff 2SA1473 ICEO VCE = 120 V, Ta = 60°C, IB = 0 tenan follo .
sem current (Base open) 2SA1473A VCE = 120 V, IB = 0 in it w Forward current transfer ratio * hFE VCE = 10 V, IC = 5 mA 60 Ma e vis ://ww Collector-emitter saturation voltage VCE(sat) IC = 50 mA, IB = 5 mA as ttp Transition frequency fT VCB = 10 V, IE = −10 mA, f = 200 MHz 50 Ple h Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz V 1 µA 1 220  1.
2 ...


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