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BU111

Part Number	BU111
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jan 9, 2012
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltag- : VCEO(SUS)= 300V(Min) ·Low Collecto...
Datasheet	BU111 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltag- : VCEO(SUS)= 300V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.
5V(Max)@ IC= 2.
5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in color TV receivers chopper supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Repetitive 8 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 50 W 150 ℃...

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