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BU999

Inchange Semiconductor
Part Number BU999
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Jan 9, 2012
Detailed Description isc Silicon NPN Power Transistor BU999 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 140V(Min) ·High...
Datasheet PDF File BU999 PDF File

BU999
BU999

Overview
isc Silicon NPN Power Transistor BU999 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 140V(Min) ·High Switching Speed ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching and linear applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 25 A ICP Collector Current-Pulse 40 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 106 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.
08 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specifi...


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