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2SC3122

Part Number	2SC3122
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3122 2SC3122 TV VHF RF Amplifier Applications Unit: mm · Hig...
Datasheet	2SC3122 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3122 2SC3122 TV VHF RF Amplifier Applications Unit: mm · High gain: Gpe = 24dB (typ.
) (f = 200 MHz) · Low noise: NF = 2.
0dB (typ.
) (f = 200 MHz) · Excellent forward AGC characteristics Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 30 3 20 10 150 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.
012 g (typ.
) Characteristics Symbo...

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