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2SC3138

Part Number	2SC3138
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Mar 22, 2005
Detailed Description	2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Amplifier Applications H...
Datasheet	2SC3138 PDF File

Overview

2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Amplifier Applications High Voltage Switching Applications Unit: mm • High voltage: VCBO = 200 V (max) VCEO = 200 V (max) • Small flat package • Complementary to 2SA1255 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 200 V 200 V 5 V 50 mA 20 mA 150 mW 125 °C −55 to 125 °C JEDEC JEITA TOSHIBA TO-236MOD SC-59 2-3F1A Note: Using continuously un...

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