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2SC3263

Sanken electric

Silicon NPN Transistor

VCEO = 230 V, IC = 15 A Silicon NPN Epitaxial Planar Transistor 2SC3263 Data Sheet Description The 2SC3263 is an NPN t...


2SC3263

Sanken electric


Octopart Stock #: O-71343

Findchips Stock #: 71343-F

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Description
VCEO = 230 V, IC = 15 A Silicon NPN Epitaxial Planar Transistor 2SC3263 Data Sheet Description The 2SC3263 is an NPN transistor of 230 V, 15 A. The product has constant hFE characteristics in a wide current range, providing high-quality audio sounds. Features ● Complementary to 2SA1294 ● LAPT (Linear Amplifier Power Transistor) ● High Transition
More View Frequency ● Bare Lead Frame: Pb-free (RoHS Compliant) ● VCEO--------------------------------------------------- 230 V ● IC --------------------------------------------------------15 A ● fT-----------------------------------------------------60 MHz ● PC ----------------------------------------------------- 130 W Application ● Audio Power Amplifer Package TO3P-3L (4) (1) (2) (3) (2)(4) (1) Base (2) Collector (1) (3) Emitter (4) Collector (3) Not to scale 2SC3263-DSE Rev.1.1 SANKEN ELCTRIC CO., LTD. 1 Sep. 28, 2021 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 2SC3263 Absolute Maximum Ratings Unless otherwise specified, TA = 25 °C. Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Base Current IB Collector Power Dissipation PC Operating Junction Temperature TJ Storage Temperature TSTG Conditions TC = 25 °C Rating Unit 230 V 230 V 5 V 15 A 4 A 130 W 150 °C −55 to 150 °C Thermal Characteristics Unless otherwise specified, TA = 25 °C. Parameter Symbol Thermal Resistance (Junction to Case) RθJC Thermal Resistance (Junction to Ambient) RθJA Conditions Min. Typ. Max. Unit — — 0.96 °C/W — — 35.7 °C/W Electrical Characteristics Unless otherwise specified, TA = 25 °C. Parameter Symbol Collector Cut-off Current Emitter Cut-off Current Collector to Emitter Breakdown Voltage DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency ICBO IEBO V(BR)CEO hFE VCE(sat) fT Collector Output Capacitance COB Conditions VCB = 230 V, IE = 0 A VEB = 5 V, IC = 0 A IC = 25 mA VCE = 4 V, IC = 5 A IC = 5 A, IB = 0.5 A VCE = 12 V, IE = −2 A VCB = 10 V, IE = 0 A, f = 1 MHz Min. Typ. Max. Unit — — 100 µA — — 100 µA 230 — — V 40 — 140 — — — 2.0 V — 60 — MHz — 250 — pF hFE Rank For the marking area of the rank, see the Marking Diagram. Rank R hFE 40 to 80 O 50 to 100 Y 70 to 140 2SC3263-DSE Rev.1.1 SANKEN ELCTRIC CO., LTD. 2 Sep. 28, 2021 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2017 2SC3263 Rating and Characteristic Curves Single Pulse Collector Power Dissipation, PC (W) Collector Current, IC (A) Collector-Emitter Voltage, VCE (V) Figure 1. Safe Operating Area Ambient Temperature, TC (°C) Figure 2. Power Dissipation vs. Ambient Temperature Collector-Emitter Saturation Voltage, VCE(sat) (V) Collector Current, IC (A) Collector-






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