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2SC3266

Part Number	2SC3266
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN TRANSISTOR
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3266 Power Amplifier Applications Power Switching Applica...
Datasheet	2SC3266 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3266 Power Amplifier Applications Power Switching Applications 2SC3266 Unit: mm · Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 2 A) · Complementary to 2SA1296 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 20 6 2 0.
5 750 150 -55~150 Unit V V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-...

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