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2SC3338

Hitachi Semiconductor
Part Number 2SC3338
Manufacturer Hitachi Semiconductor
Description Silicon NPN Epitaxial Transistor
Published Mar 22, 2005
Detailed Description 2SC3338 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3...
Datasheet PDF File 2SC3338 PDF File

2SC3338
2SC3338

Overview
2SC3338 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline UPAK 1 3 2 4 1.
Base 2.
Collector 3.
Emitter 4.
Collector (Flange) 2SC3338 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 12 3 50 400 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter cutoff current Collector cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: Marking is “AR”.
Symbol V(BR)CBO V(BR)CEO I EBO I CBO hFE Cob fT PG NF Min 20 12 — — 30 — 3.
5 — — Typ — — — — 90 1.
0 4.
5 8.
2 2.
0 Max — — 10 0.
5 200 1.
5 — — — pF GHz dB dB Unit V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ VEB = 3 V, IC =...


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