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2SC3833

Sanken electric
Part Number 2SC3833
Manufacturer Sanken electric
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description 2SC3833 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) sAbsolute maxim...
Datasheet PDF File 2SC3833 PDF File

2SC3833
2SC3833


Overview
2SC3833 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3833 500 400 10 12(Pulse24) 4 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.
4A IC=7A, IB=1.
4A VCE=12V, IE=–1A VCB=10V, f=1MHz (Ta=25°C) 2SC3833 100max 100max 400min 10 to 30 0.
5max 1.
3max 10typ 105typ V MHz pF V Unit External Dimensions MT-100(TO3P) 5.
0±0.
2 15.
6±0.
4 9.
6 2.
0 1.
8 4.
8±0.
2 2.
0±0.
1 µA µA V 19.
9±0.
3 4.
0 a b ø3.
2±0.
1 20.
0min 4.
0max 2 3 1.
05 +0.
2 -0.
1 0.
65 +0.
2 -0.
1 1.
4 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 28.
5 IC (A) 7 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.
7 IB2 (A) –1.
4 ton (µs) 1.
0max tstg (µs) 3.
0max tf (µs) 0.
5max 5.
45±0.
1 B C E 5.
45±0.
1 Weight : Approx 6.
0g a.
Type No.
b.
Lot No.
I C – V CE Characteristics (Typical) 12 V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (s a t) (V ) (I C /I B =5) I C – V BE Temperature Characteristics (Typical) 12 (V C E =4V) 1000m 10 Collector Current I C (A) A 80 0m A 60 0m A 10 1 –55˚C (Case 25˚C (Cas 125 Collector Current I C (A) V B E (sat) 8 400m A Temp) 8 p) Tem 6 e Temp) as e 2 5 Temp ) ˚C (Cas 4 4 (Ca 200mA I B =100mA 2 12 5˚ V C E (sat) 0 0.
02 0.
05 0.
1 0.
5 1 5 –5 5˚ C 2 0 0 1 2 3 4 10 0 0 0.
2 0.
4 0.
6 0.
8 –55˚C C 25˚C 125 (C 1.
0 (Case ˚C Temp e Te se T ˚C (Ca se emp) mp) 6 ) 1.
2 Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V) (V C E =4V) 50 8 θ j- a ( ˚ C/ W) h FE – I C Characteristics (Typical) t o n • t st g• t f ( µ s) 5 t on •t stg • t f – I C Characteristics (Typical)...



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