DatasheetsPDF.com

2SC3836

Hitachi Semiconductor
Part Number 2SC3836
Manufacturer Hitachi Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description 2SC3836 Silicon NPN Epitaxial Application Low frequency amplifier, switching Outline SPAK 1 23 1. Emitter 2. Collec...
Datasheet PDF File 2SC3836 PDF File

2SC3836
2SC3836

Overview
2SC3836 Silicon NPN Epitaxial Application Low frequency amplifier, switching Outline SPAK 1 23 1.
Emitter 2.
Collector 3.
Base 2SC3836 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 60 50 15 300 300 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Base to emitter voltage DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BE)EBO I CBO VBE hFE1 hFE2 Collector to emitter saturation voltage VCE(sat) Min 60 50 15 — — 800 500 — Typ — — — — — — — — Max — — — 1 0.
75 2000 — 0.
3 V Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 50 V, IE = 0 VCE = 6 V, IC = 1 mA VCE = 6 V,...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)