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2SD428

Part Number	2SD428
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Jun 1, 2012
Detailed Description	isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High Power D...
Datasheet	2SD428 PDF File

Overview

isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC=25℃ ·Complement to Type 2SB558 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
·Recommended for 40W high-fidelity audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junct...

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