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CLY2

Part Number	CLY2
Manufacturer	TriQuint Semiconductor
Description	GaAs FET
Published	Jul 1, 2012
Detailed Description	CLY2 Datasheet High-Power Packaged GaAs FET Description The CLY2 is a high-breakdown voltage GaAs FET designed for PA ...
Datasheet	CLY2 PDF File

Overview

CLY2 Datasheet High-Power Packaged GaAs FET Description The CLY2 is a high-breakdown voltage GaAs FET designed for PA driver applications in the 400 MHz to 3 GHz frequency range.
It is ideal for portable PA applications in mobile phones and portable WLAN transceivers due to its easy matching and excellent linearity.
The CLY2 exhibits +23.
5 dBm output power with +3V Vds at 1.
8 GHz with an associated gain of 14.
5 dB.
Power added efficiencies to 55% are achievable.
Applications • Power Amplifiers for WLAN transceivers Driver Amplifiers for WLAN or mobile phone basestations Low Noise Amplifier for basestations and antenna amplifiers • • Features • • • • • • For frequencies up to 3 GHz www.
DataSheet.
net/ Package Outline, MW6 Wide operating voltage range: 2 to 6 V 4 POUT 23.
5 dBm typical at VD=3V, f=1.
8GHz High efficiency: better than 55 % Nfmin 0.
79 dB typical at 900 MHz 5 6 3 Low Cost 2 1 Pin Configuration: 1 & 6: Gate 2 & 5: Source 3 & 4: Drain For additional information and latest specifications, see our website: www.
triquint.
com Revision C, December 14, 2005 2 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ CLY2 Datasheet Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature Total power dissipation (Ts < 50 °C) 1) Thermal Resistance Channel-soldering point 1) 1) Symbol VDS VDG VGS ID TCh Tstg Ptot Values 9 12 -6 600 150 -55.
.
.
+150 900 Unit V V V mA °C °C mW RthChS ≤110 K/W Ts: Temperature at soldering point Electrical Characteristics (TA = 25°C , unless otherwise specified) Parameter Drain-source saturation current VDS = 3 V VDS = 3 V VDS = 3 V VDS= 3 V VGS = 0 V Symbol www.
DataSheet.
net/ min 300 -3.
8 - typ 450 5 5 -2.
8 15.
5 max 650 50 20 -1.
8 - Unit mA µA µA V dB IDSS ID IG VGS(p) G Drain-source pinch-off current VGS = -3.
8 V VGS = -3.
8 V ID=50µA f = 1.
8 GHz Gate pinch-off current Pinch-off Voltage Small Signal Gain*) VDS = 5 V ID = 180 mA Pin = -5...

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