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2N5210

ON Semiconductor
Part Number 2N5210
Manufacturer ON Semiconductor
Description Amplifier Transistors
Published Mar 22, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5209/D Amplifier Transistors NPN Silicon COLLECTOR 3 2...
Datasheet PDF File 2N5210 PDF File

2N5210
2N5210

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5209/D Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N5209 2N5210 1 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 50 50 4.
0 50 625 5.
0 1.
5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.
3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 1.
0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 0.
1 mAdc, IE = 0) Collector Cutoff Current (VCB = 35 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.
0 Vdc, IC = 0) V(BR)CEO V(BR)CBO ICBO IEBO 50 50 — — — — 50 50 Vdc Vdc nAdc nAdc Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc.
1996 1 2N5209 2N5210 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 100 µAdc, VCE = 5.
0 Vdc) hFE 2N5209 2N5210 2N5209 2N5210 2N5209 2N5210 VCE(sat) VBE(on) 100 200 150 250 150 250 — — 300 600 — — — — 0.
7 0.
85 Vdc Vdc — (IC = 1.
0 mAdc, VCE = 5.
0 Vdc) (IC = 10 mAdc, VCE = 5.
0 Vdc)(1) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.
0 mAdc) Base – Emitter On Voltage (IC = 1.
0 mAdc, VCE = 5.
0 mAdc) SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 500 µAdc, VCE = 5.
0 Vdc, f = 20 MHz) Collector–Base Capacitance (VCB = 5.
0 Vdc, IE = 0, f = 1.
0 MHz) Small–Signal Current Gain (IC = 1.
0 mAdc, VCE = ...


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