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2N5550

Part Number	2N5550
Manufacturer	ON Semiconductor
Description	Amplifier Transistor
Published	Mar 22, 2005
Detailed Description	2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS...
Datasheet	2N5550 PDF File

Overview

2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector − Emitter Voltage Symbol 2N5550 2N5551 VCEO Value 140 160 Unit Vdc Collector − Base Voltage VCBO Vdc 2N5550 160 2N5551 180 Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD 6.
0 Vdc 600 mAdc 625 mW 5.
0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.
5 W 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 2...

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