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2N5661

Part Number	2N5661
Manufacturer	Microsemi Corporation
Description	NPN POWER SILICON TRANSISTOR
Published	Mar 22, 2005
Detailed Description	TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 Devices 2N5660 2N5661 2N5662 2N5663 Qualifie...
Datasheet	2N5661 PDF File

Overview

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 Devices 2N5660 2N5661 2N5662 2N5663 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCEO VCBO VCER VEBO IB IC @ TA = +250C @ TC = +1000C Operating & Storage Junction Temperature Range Total Power Dissipation PT TJ, Tstg 2N5660 2N5661 5.
0 87.
5 2N5660 2N5661 2N5662 2N5663 200 300 250 400 250 400 6.
0 0.
5 2.
0 2N5660 2N5662 2N5661 2N5663 2.
0(1) 1.
0(2) (3) 20 15(4) -65 to +200 2N5662 2N5663 6.
67 145.
8 Unit Vdc Vdc Vdc Vdc Adc Adc TO-66* (TO-213AA) 2N5660, 2N5661 W W 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Junction-to-Ambient 1) 2) 3) Symbol RθJC Unit 0 C/W 4) RθJA Derate linearly 11.
4 mW/0C for TA >+ 250C Derate linearly 5.
7 mW/0C for TA > +250C Derate linearly 200 mW/0C for TC > +1000C Derate linearly 150 mW/0C for TC > ...

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