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2N3866

Advanced Power Technology
Part Number 2N3866
Manufacturer Advanced Power Technology
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Published Nov 30, 2012
Detailed Description 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • Silicon NPN, To-39 packaged VHF/UHF Transis...
Datasheet PDF File 2N3866 PDF File

2N3866
2N3866

Overview
2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.
0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product • 1.
Emitter 2.
Base 3.
Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment.
Applications include amplifier; pre-driver, driver, and output stages.
Also suitable for oscillator and frequency-multiplier functions.
www.
DataSheet.
net/ ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value 30 55 3.
5 400 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation Derate above 25º C 5.
0 28.
6 Watts mW/ º C 2N3866.
PDF 10-28-02 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.
ADVANCEDPOWER.
COM or contact our factory direct.
Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ 2N3866 / 2N3866A ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCER BVCEO BVCBO BVEBO ICEO ICEX Test Conditions Min.
Collector-Emitter Breakdown Voltage (IC = 5.
0 mAdc, RBE = 10 ohms) Collector-Emitter Sustaining Voltage (IC=5.
0 mAdc, IB=0) Collector-Base Breakdown Voltage (IE = 0, IC = 0.
1 mAdc) Emitter-Base Breakdown Voltage (IE = 0.
1 mAdc, IC = 0) Collector Cutoff Current (VCE = 28 Vdc, IB = 0) Collector Cutoff Current (VCE = 55 Vdc, VBE = 1.
5 Vdc) www.
DataSheet.
net/ Value Typ.
Max.
20 100 Unit Vdc Vdc Vdc Vdc µA µA 55 30 55 3.
5 - (on) HFE DC Current Gain (IC = 360 mAdc, VCE = 5.
0 Vdc) Both (IC = 50 mAdc, VCE = 5.
0 Vdc) 2N3866 (IC = 50 mAdc, VCE = 5.
0 Vdc) 2N3866A Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 20 mAdc) 5.
0 10 25 200 200 - VCE(sat) - - 1.
0 Vdc DYNAMIC Symbol fT Test Conditions Min.
Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 15 Vd...


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