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2N5680

Comset Semiconductors
Part Number 2N5680
Manufacturer Comset Semiconductors
Description (2N5679 / 2N5680) PNP Switching Transistors
Published Dec 3, 2012
Detailed Description 2N5679 – 2N5680 PNP SWITCHING TRANSISTORS The 2N5679 and 2N5680 are silicon expitaxial planar PNP transistors in jedec T...
Datasheet PDF File 2N5680 PDF File

2N5680
2N5680

Overview
2N5679 – 2N5680 PNP SWITCHING TRANSISTORS The 2N5679 and 2N5680 are silicon expitaxial planar PNP transistors in jedec TO-39 metal case.
They are intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit.
The complementary NPN types are the 2N5681 and 2N5682 .
Compliance to RoHS.
C B E ABSOLUTE MAXIMUM RATINGS Value 25679 IB =0 IE =0 IC =0 www.
DataSheet.
net/ Symbol VCEO VCBO VEBO IC IB PD TJ TStg Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature range 2N5680 -120 -120 Unit V V V A mA W °C -100 -100 -4 -1 -500 1 10 200 -65 to +150 Tamb = 25°C Tcase = 25°C THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to ambient Thermal Resistance, Junction to case Value 175 17.
5 Unit °C/W °C/W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ 2N5679 – 2N5680 ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specified Symbol ICBO ICEO Ratings Collector Cutoff Current Collector Cutoff Current Test Condition(s) Min 2N5679 2N5680 2N5679 2N5680 2N5679 2N5680 2N5679 2N5680 -100 -120 40 5 30 40 - Typ - Mx -1 -10 -1 Unit µA µA µA ICEV Collector Cutoff Current VCB = -100 V, IE = 0 VCB = -120 V, IE = 0 VCE = -70 V, IB = 0 VCE = -80 V, IB = 0 VCE = -100 V, VBE = 1.
5 V VCE = -120 V, VBE = 1.
5 V VCE = -100 V, VBE = 1.
5 V TC = 150°C VCE = -120 V, VBE = 1.
5 V TC = 150°C - -1 mA IEBO VCEO(sus) VCE(SAT) VBE Emitter Cutoff VBE = -4.
0 V, IC = 0 Current Collector Emitter I = -10 mA, IB = 0 Sustaining voltage (*) C IC = -250 mA IB = -25 mA IC = -500 mA Collector-Emitter saturation Voltage (*) IB = -50 mA IC = -1 A IB = -200 mA Base-Emitter Voltage IC = -250 mA, VCE = -2 V (*) www.
DataSheet.
net/ hFE DC Current Gain (*) fT COB hfe Transition frequency Output Capacitance Small Signal Current Gain 2N5679 2N5680 2N5679 2N5680 2N5679 2N5680 2N...


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