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2N6166

Advanced Semiconductor
Part Number 2N6166
Manufacturer Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Published Mar 22, 2005
Detailed Description 2N6166 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N6166 is Designed to operate in a collector modulated VHF ...
Datasheet PDF File 2N6166 PDF File

2N6166
2N6166

Overview
2N6166 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N6166 is Designed to operate in a collector modulated VHF Power Amplifier Applications up to 200 MHz.
PACKAGE STYLE .
500 4L FLG .
112x45° A FULL R L E C Ø.
125 NOM.
FEATURES: • ηC = 60 % min.
@ 100 W/150 MHz • PG = 6.
0 dB min.
@ 100 W/150 MHz • Omnigold™ Metalization System C B B E H D G F E I J K MAXIMUM RATINGS IC VCBO VEBO PDISS TJ TSTG θJC 9.
0 A 65 V 4.
0 V 117 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.
5 °C/W DIM A B C D E F G H I J K L MINIMUM inches / mm MAXIMUM inches / mm .
220 / 5.
59 .
125 / 3.
18 .
245 / 6.
22 .
720 / 18.
28 .
125 / 3.
18 .
970 / 24.
64 .
495 / 12.
57 .
003 / 0.
08 .
090 / 2.
29 .
150 / 3.
81 .
980 / 24.
89 .
230 / 5.
84 .
255 / 6.
48 .
7.
30 / 18.
54 .
980 / 24.
89 .
505 / 12.
83 .
007 / 0.
18 .
110 / 2.
79 .
175 / 4.
45 .
280 / 7.
11 1.
050 / 26.
67 ORDER CODE: ASI10790 CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO ICES ICBO hFE COB PG ηC VCC = 28 V TC = 25 °C NONETEST CONDITIONS IC = 200 mA IC = 200 mA IE = 10 Ma ...


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