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BD643


Part Number BD643
Manufacturer Comset Semiconductors
Title SILICON DARLINGTON POWER TRANSISTORS
Description SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circu...
Features 651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value Unit IB Base Current 300 mA PT Power Dissipation @ Tmb 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 www.DataSheet.net/ Ts Storage Temperature range Limiting values in ...

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BD640CS : www.DataSheet.co.kr BD640CS~BD6200CS SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • For use in low voltage high frequency inverters, free wheeling, and polarity protection applications • High temperature soldering guaranteed:260oC/10 seconds at terminals • In compliance with EU RoHS 2002/95/EC directives 40 to 200 Volts CURRENT 6.0 Amperes MECHANICALDATA • Case: D PAK/TO-252 molded plastic • Terminals: Solder plated, solderable per MIL-STD-750,Method 2026 • P.

BD640CT : www.DataSheet.co.kr BD640CT~BD6200CT SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity .307(7.8) .283(7.2) .264(6.7) .248(6.3) .098(2.5) .082(2.1) .024(0.6) .016(0.4) 40 to 200 Volts CURRENT 6.0 Amperes TO-251AB Unit : inch (mm) • For use in low voltage high frequency inverters, free wheeling, and polarity protection applications • High temperature soldering guaranteed:260oC/10 seconds at terminals • In compliance with EU RoHS 2002/95/EC directives .225(5.7) .2.

BD6422EFV : These products are a low power consumption PWM constant current-drive driver of bipolar stepping motor with power supply’s rated voltage of 45V and rated output current of 1.0A, 1.5A. ●Feature 1) Power supply: one system drive (rated voltage of 45V) 2) Rated output current: 1.0A, 1.5A 3) Low ON resistance DMOS output 4) CLK-IN drive mode (BD6425/6423EFV) 5) Parallel IN drive mode (BD6422EFV) 6) PWM constant current control (other oscillation) 7) Built-in spike noise blanking function (external noise filter is unnecessary) 8) FULL STEP & HALF STEP (two kinds), applicable to QUARTER STEP 9) Current decay mode switching function (4 kinds of FAST/SLOW DECAY ratio) 10) Normal rotation & reverse .

BD6423EFV : These products are a low power consumption PWM constant current-drive driver of bipolar stepping motor with power supply’s rated voltage of 45V and rated output current of 1.0A, 1.5A. ●Feature 1) Power supply: one system drive (rated voltage of 45V) 2) Rated output current: 1.0A, 1.5A 3) Low ON resistance DMOS output 4) CLK-IN drive mode (BD6425/6423EFV) 5) Parallel IN drive mode (BD6422EFV) 6) PWM constant current control (other oscillation) 7) Built-in spike noise blanking function (external noise filter is unnecessary) 8) FULL STEP & HALF STEP (two kinds), applicable to QUARTER STEP 9) Current decay mode switching function (4 kinds of FAST/SLOW DECAY ratio) 10) Normal rotation & reverse .

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BD643 : ·With TO-220C package www.datasheet4u.com ·Complement to type BD644 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD643 Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 45 45 5 8 12 150 62.5 150 -55~150 UNIT V V V A A A W THERMAL CHARACTERISTI.

BD643 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type BD644 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junc.

BD643F : ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD644F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.15 A 20 W 32 150 ℃ Tstg Storage Temperature Range -65~150 .

BD644 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD643 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Peak -12 A IB Base Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ.

BD644 : SEMICONDUCTORS BD644 – 646 – 648 – 650 – 652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 Value 45 60 80 100 120 45 60 80 100 120 Unit -VCBO Collector-Base Voltage www.DataSheet.net/ V -VCEO Collector-Emitter Voltage.

BD645 : www.DataSheet4U.com BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD645 Collector-base voltage (IE = 0) BD647 BD649 BD651 BD645 Collector-emitter voltage (IB = 0) BD647 BD649 BD651 Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or be.

BD645 : ·With TO-220C package www.datasheet4u.com ·Complement to type BD646/648/650/652 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD645/647/649/651 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BD645 VCBO Collector-base voltage BD647 BD649 BD651 BD645 VCEO Collector-emitter voltage BD647 BD649 BD651 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 80 .

BD645 : SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value 60 80 100 120 140 45 60 80 100 120 Unit VCBO Collector-Base Voltage www.DataSheet.net/ V VCEO Collector-Emitter Voltage V.

BD645 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type BD646 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A IB Base Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junct.

BD64550EFV : This is 1-chip system motor driver integrating 2-channel H-bridge driver, step-down switching regulator with built-in power DMOS, series regulator and reset output. ●Features 1) Low-on resistance output H-bridge driver (2-channel) 2) Constant-current chopping drive H-bridge driver 3) Switching regulator with built-in P-channel power DMOS FET 4) Soft start function: 23.6 ms (Typ.) 5) Reset release timer: 80 ms (Typ.) 6) 16 bit serial interface 7) Logic input interface (serial/parallel changeable) 8) Ultra thin type high heat dissipation HTSSOP-B40 package 9) Overcurrent protection in H-bridge driver block 10) Input voltage low voltage protection in H-bridge driver block 11) Overcurrent protec.

BD645CS : www.DataSheet.co.kr BD640CS~BD6200CS SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • For use in low voltage high frequency inverters, free wheeling, and polarity protection applications • High temperature soldering guaranteed:260oC/10 seconds at terminals • In compliance with EU RoHS 2002/95/EC directives 40 to 200 Volts CURRENT 6.0 Amperes MECHANICALDATA • Case: D PAK/TO-252 molded plastic • Terminals: Solder plated, solderable per MIL-STD-750,Method 2026 • P.




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