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BD684


Part Number BD684
Manufacturer Comset Semiconductors
Title SILICON DARLINGTON POWER TRANSISTORS
Description PNP BD684 – BD684A SILICON DARLINGTON POWER TRANSISTORS The BD684 and BD684A are PNP eptaxial-base transistors in monolithic Darlington circuit f...
Features ed Symbol ICBO ICEO IEBO VCE(SAT) hFE VBE hfe fhfe VF I(SB) Ratings Collector cut-off current Test Condition(s) Min 750 10 -0,8 - Typ 60 -1,5 0,8 4,5 Max -0,2 -2 -0,5 -5 -2,5 Unit mA mA mA V IE=0, VCB= -120 V IE=0, VCB= -120V, Tj= 150°C Collector cut-off current IB=0,VCE= -1/2VCEOMAX Emitter...

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BD680 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD676/D Plastic Medium-Power Silicon PNP Darlingtons for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 • BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 MAXIMUM RATING Rating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ .

BD680 : BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG Plastic Medium-Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 • BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BD676G, BD676AG BD678G, BD678AG BD680G, BD680AG BD682G, BD682TG VCEO Vdc .

BD680 : SYMBOL TEST CONDITION BD676 BD678 BD680 BD682 BD684 UNIT BD676A BD678A BD680A Collector -Base Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current Base Current Collector Power Dissipation @ Tc=25ºC Derate above 25ºC VCBO VCEO VEBO IC IB PD 45 60 80 100 120 V 45 60 80 100 120 V 5.0 V 4.0 A 0.1 A 40 W 0.32 W/ºC Operation and Storage Junction Temperature Range Tj,Tstg -55 to +150 ºC THERMAL RESISTANCE Junction to Case Rth(j-c) 3.13 ºC/W ELECTRICAL CHARACTERISTICS (.

BD680 : BD680 PNP Power Darlington Transistors TO-126 Plastic Package Dimensions A B C D E F G L M N P S Pin Configuration: 1. Emitter 2. Collector 3. Base Minimum Maximum 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.25 (Typical) 0.49 0.75 4.5 (Typical) 15.7 (Typical) 1.27 (Typical) 3.75 (Typical) 3.0 3.2 2.5 (Typical) Dimensions : Millimetres Page 1 10/05/08 V1.1 BD680 PNP Power Darlington Transistors Absolute Maximum Ratings Parameter Symbol BD680 Unit Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Total Power Dissipation at Ta = 25°C Derate above 25°C Total Power Dissipation at Tc = 25°C Derate above 25°C Operating and Storage Junction Te.

BD680 : PNP BD676/A - BD678/A - BD680/A - BD682/A SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD676/A BD678/A BD680/A BD682/A BD676/A BD678/A BD680/A BD682/A -IC -ICM -IBM @ Tmb = 25°C Value 45 60 80 100 45 60 80 100 5 4 6 0.1 40 150 -65 to +150 Unit -VCEO Collector-Emitter Voltage V www.DataSheet.net/ -VCBO -VEBO -IC -IB PT TJ TStg Collector-Base Voltage Emitter-Base Voltage Collector Curr.

BD680 : The CENTRAL SEMICONDUCTOR BD676 series are silicon PNP Darlington power transistors designed for audio and video output applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL BD676 Collector-Base Voltage VCBO 45 Collector-Emitter Voltage VCEO 45 Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current ICM Continuous Base Current IB Power Dissipation PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJC Thermal Resistance ΘJA BD678 BD680 BD682 60 80 100 60 80 100 5.0 4.0 6.0 100 40 -65 to +150 3.12 100 BD684 120 120 UNITS V V V A A mA W °C °C/W °C/W ELECT.

BD680 : The devices are manufactured in planar base island technology with monolithic Darlington configuration. . 1 2 3 SOT-32 Figure 1. Internal schematic diagram R1 typ.= 15 KΩ Table 1. Device summary Order codes BD677 BD677A BD678 BD678A BD679 BD679A BD680 BD680A BD681 BD682 Marking BD677 BD677A BD678 BD678A BD679 BD679A BD680 BD680A BD681 BD682 January 2008 Rev 5 Package SOT-32 R2 typ.= 100 Ω Packaging Tube 1/12 www.st.com 12 Contents Contents BD6xxx 1 Absolute maximum ratings . . 3 2 Electrical characteristics . 4 2.1 Typical characteristic (curv.

BD680 : ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -80V ·DC Current Gain— : hFE = 750(Min) @ IC= -1.5 A ·Complement to Type BD679 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range -0.1 A 40 W 150 ℃ -55~150 ℃ THERM.

BD680A : The devices are manufactured in planar base island technology with monolithic Darlington configuration. . 1 2 3 SOT-32 Figure 1. Internal schematic diagram R1 typ.= 15 KΩ Table 1. Device summary Order codes BD677 BD677A BD678 BD678A BD679 BD679A BD680 BD680A BD681 BD682 Marking BD677 BD677A BD678 BD678A BD679 BD679A BD680 BD680A BD681 BD682 January 2008 Rev 5 Package SOT-32 R2 typ.= 100 Ω Packaging Tube 1/12 www.st.com 12 Contents Contents BD6xxx 1 Absolute maximum ratings . . 3 2 Electrical characteristics . 4 2.1 Typical characteristic (curv.

BD680A : BD676A/678A/680A/682 BD676A/678A/680A/682 Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD675A, BD677A, BD679A and BD681 respectively PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD676A : BD678A : BD680A : BD682 1 TO-126 2.Collector 3.Base 1. Emitter Value - 45 - 60 - 80 - 100 - 45 - 60 - 80 - 100 -5 -4 -6 - 100 14 88 150 - 65 ~ 150 Units V V V V V V V V V A A mA W °C/W °C °C VCEO Collector-Emitter Voltage : BD676A : BD678A : BD680A : BD682 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC.

BD680A : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD676/D Plastic Medium-Power Silicon PNP Darlingtons for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 • BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 MAXIMUM RATING Rating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ .

BD680A : BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG Plastic Medium-Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 • BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BD676G, BD676AG BD678G, BD678AG BD680G, BD680AG BD682G, BD682TG VCEO Vdc .

BD680A : SYMBOL TEST CONDITION BD676 BD678 BD680 BD682 BD684 UNIT BD676A BD678A BD680A Collector -Base Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current Base Current Collector Power Dissipation @ Tc=25ºC Derate above 25ºC VCBO VCEO VEBO IC IB PD 45 60 80 100 120 V 45 60 80 100 120 V 5.0 V 4.0 A 0.1 A 40 W 0.32 W/ºC Operation and Storage Junction Temperature Range Tj,Tstg -55 to +150 ºC THERMAL RESISTANCE Junction to Case Rth(j-c) 3.13 ºC/W ELECTRICAL CHARACTERISTICS (.

BD680A : PNP BD676/A - BD678/A - BD680/A - BD682/A SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD676/A BD678/A BD680/A BD682/A BD676/A BD678/A BD680/A BD682/A -IC -ICM -IBM @ Tmb = 25°C Value 45 60 80 100 45 60 80 100 5 4 6 0.1 40 150 -65 to +150 Unit -VCEO Collector-Emitter Voltage V www.DataSheet.net/ -VCBO -VEBO -IC -IB PT TJ TStg Collector-Base Voltage Emitter-Base Voltage Collector Curr.

BD680A : ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -80V ·DC Current Gain— : hFE = 750(Min) @ IC= -2A ·Complement to Type BD679A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range -0.1 A 40 W 150 ℃ -55~150 ℃ THERMAL.

BD680AG : BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG Plastic Medium-Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 • BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BD676G, BD676AG BD678G, BD678AG BD680G, BD680AG BD682G, BD682TG VCEO Vdc .

BD680CS : www.DataSheet.co.kr BD640CS~BD6200CS SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • For use in low voltage high frequency inverters, free wheeling, and polarity protection applications • High temperature soldering guaranteed:260oC/10 seconds at terminals • In compliance with EU RoHS 2002/95/EC directives 40 to 200 Volts CURRENT 6.0 Amperes MECHANICALDATA • Case: D PAK/TO-252 molded plastic • Terminals: Solder plated, solderable per MIL-STD-750,Method 2026 • P.




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