DatasheetsPDF.com

BDW84

Part Number BDW84
Manufacturer Comset Semiconductors
Title PNP SILICON POWER DARLINGTONS
Description PNP BDW84 – BDW84A – BDW84B BDW84C – BDW84D PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base PNP power monolithic Darling...
Features istance Value 0.83 35.7 Unit °C/W 23/10/2012 COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP BDW84
  – BDW84A
  – BDW84B BDW84C
  – BDW84D ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) BDW84 BDW84A BDW84B BDW84C BDW84D BDW8...

File Size 171.88KB
Datasheet BDW84 PDF File







Similar Datasheet

BDW83 : ·With TO-3PN package www.datasheet4u.com ·Complement to type BDW84/84A/84B/84C/84D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDW83/83A/83B/83C/83D Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER BDW83 BDW83A VCBO Collector-base voltage BDW83B BDW83C BDW83D BDW83 BDW83A VCEO Collector-emitter voltage BDW83B BDW83C BDW83D VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitt.

BDW83 : BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D 150 W at 25°C Case Temperature 15 A Continuous Collector Current C B SOT-93 PACKAGE (TOP VIEW) 1 ● ● ● 2 Minimum hFE of 750 at 3V, 6 A E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDW83 BDW83A Collector-base voltage (IE = 0) BDW83B BDW83C BDW83D BDW83 BDW83A Collector-emitter voltage (IB = 0) (see Note 1) BDW83B BDW83C www.DataSheet.net/ SYMBOL VALUE 45 60 UNIT V CBO 80 100 120 45 60 V VCEO 80 100 120 V BDW83D VEBO IC IB Ptot Pt.

BDW83 : NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D, NPN SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. They are intended for use in power linear and switching applications. The complementary are BDW84, BDW84A, BDW84B, BDW84C, BDW84D Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDW83 BDW83A BDW83B BDW83C BDW83D BDW83 BDW83A BDW83B BDW83C BDW83D Value 45 60 80 100 120 45 60 80 100 120 5 15 0.5 150 3.5 -65 to +150 -65 to +150 Unit VCEO Collector-Emitter Voltage IB = 0 www.DataSheet.net/ V VCBO Collector- Emitter Voltage IE = 0 IC = 0 V VEBO IC IB Pt TJ TStg Emitter-Base .

BDW83 : ·Collector Current -IC= 15A ·High DC Current Gain-hFE= 750(Min)@ IC= 6A ·Complement to Type BDW84/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDW83 45 VCER Collector-Emitter Voltage BDW83A 60 BDW83B 80 BDW83C 100 BDW83 45 VCEO Collector-Emitter Voltage BDW83A 60 BDW83B 80 BDW83C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 15 IB Base Current-Continuous 0.5 Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ 3.5 150 TJ J.

BDW83A : ·With TO-3PN package www.datasheet4u.com ·Complement to type BDW84/84A/84B/84C/84D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDW83/83A/83B/83C/83D Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER BDW83 BDW83A VCBO Collector-base voltage BDW83B BDW83C BDW83D BDW83 BDW83A VCEO Collector-emitter voltage BDW83B BDW83C BDW83D VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitt.

BDW83A : BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D 150 W at 25°C Case Temperature 15 A Continuous Collector Current C B SOT-93 PACKAGE (TOP VIEW) 1 ● ● ● 2 Minimum hFE of 750 at 3V, 6 A E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDW83 BDW83A Collector-base voltage (IE = 0) BDW83B BDW83C BDW83D BDW83 BDW83A Collector-emitter voltage (IB = 0) (see Note 1) BDW83B BDW83C www.DataSheet.net/ SYMBOL VALUE 45 60 UNIT V CBO 80 100 120 45 60 V VCEO 80 100 120 V BDW83D VEBO IC IB Ptot Pt.

BDW83A : NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D, NPN SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. They are intended for use in power linear and switching applications. The complementary are BDW84, BDW84A, BDW84B, BDW84C, BDW84D Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDW83 BDW83A BDW83B BDW83C BDW83D BDW83 BDW83A BDW83B BDW83C BDW83D Value 45 60 80 100 120 45 60 80 100 120 5 15 0.5 150 3.5 -65 to +150 -65 to +150 Unit VCEO Collector-Emitter Voltage IB = 0 www.DataSheet.net/ V VCBO Collector- Emitter Voltage IE = 0 IC = 0 V VEBO IC IB Pt TJ TStg Emitter-Base .

BDW83A : ·Collector Current -IC= 15A ·High DC Current Gain-hFE= 750(Min)@ IC= 6A ·Complement to Type BDW84/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDW83 45 VCER Collector-Emitter Voltage BDW83A 60 BDW83B 80 BDW83C 100 BDW83 45 VCEO Collector-Emitter Voltage BDW83A 60 BDW83B 80 BDW83C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 15 IB Base Current-Continuous 0.5 Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ 3.5 150 TJ J.

BDW83B : ·With TO-3PN package www.datasheet4u.com ·Complement to type BDW84/84A/84B/84C/84D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDW83/83A/83B/83C/83D Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER BDW83 BDW83A VCBO Collector-base voltage BDW83B BDW83C BDW83D BDW83 BDW83A VCEO Collector-emitter voltage BDW83B BDW83C BDW83D VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitt.

BDW83B : BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D 150 W at 25°C Case Temperature 15 A Continuous Collector Current C B SOT-93 PACKAGE (TOP VIEW) 1 ● ● ● 2 Minimum hFE of 750 at 3V, 6 A E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDW83 BDW83A Collector-base voltage (IE = 0) BDW83B BDW83C BDW83D BDW83 BDW83A Collector-emitter voltage (IB = 0) (see Note 1) BDW83B BDW83C www.DataSheet.net/ SYMBOL VALUE 45 60 UNIT V CBO 80 100 120 45 60 V VCEO 80 100 120 V BDW83D VEBO IC IB Ptot Pt.

BDW83B : NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D, NPN SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. They are intended for use in power linear and switching applications. The complementary are BDW84, BDW84A, BDW84B, BDW84C, BDW84D Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDW83 BDW83A BDW83B BDW83C BDW83D BDW83 BDW83A BDW83B BDW83C BDW83D Value 45 60 80 100 120 45 60 80 100 120 5 15 0.5 150 3.5 -65 to +150 -65 to +150 Unit VCEO Collector-Emitter Voltage IB = 0 www.DataSheet.net/ V VCBO Collector- Emitter Voltage IE = 0 IC = 0 V VEBO IC IB Pt TJ TStg Emitter-Base .

BDW83B : ·Collector Current -IC= 15A ·High DC Current Gain-hFE= 750(Min)@ IC= 6A ·Complement to Type BDW84/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDW83 45 VCER Collector-Emitter Voltage BDW83A 60 BDW83B 80 BDW83C 100 BDW83 45 VCEO Collector-Emitter Voltage BDW83A 60 BDW83B 80 BDW83C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 15 IB Base Current-Continuous 0.5 Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ 3.5 150 TJ J.

BDW83C : ·Collector Current -IC= 15A ·High DC Current Gain-hFE= 750(Min)@ IC= 6A ·Complement to Type BDW84C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 3.5 W 150 150 ℃ Tstg Storage Temperature Range -65~150 ℃ .

BDW83C : te PThe BDW83C is an epitaxial-base NPN power lemonolithic Darlington transistor mounted in oTO-247 plastic package. It is intended for use in Obsolete Product(s) - Obspower linear and switching applications. 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging BDW83C BDW83C TO-247 Tube May 2012 This is information on a product in full production. Doc ID 4265 Rev 6 1/9 www.st.com 9 Absolute maximum ratings 1 Absolute maximum ratings BDW83C Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage (IB = 0) 100 V VEBO Emitter-base vol.

BDW83C : ·With TO-3PN package www.datasheet4u.com ·Complement to type BDW84/84A/84B/84C/84D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDW83/83A/83B/83C/83D Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER BDW83 BDW83A VCBO Collector-base voltage BDW83B BDW83C BDW83D BDW83 BDW83A VCEO Collector-emitter voltage BDW83B BDW83C BDW83D VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitt.

BDW83C : BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D 150 W at 25°C Case Temperature 15 A Continuous Collector Current C B SOT-93 PACKAGE (TOP VIEW) 1 ● ● ● 2 Minimum hFE of 750 at 3V, 6 A E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDW83 BDW83A Collector-base voltage (IE = 0) BDW83B BDW83C BDW83D BDW83 BDW83A Collector-emitter voltage (IB = 0) (see Note 1) BDW83B BDW83C www.DataSheet.net/ SYMBOL VALUE 45 60 UNIT V CBO 80 100 120 45 60 V VCEO 80 100 120 V BDW83D VEBO IC IB Ptot Pt.

BDW83C : NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D, NPN SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. They are intended for use in power linear and switching applications. The complementary are BDW84, BDW84A, BDW84B, BDW84C, BDW84D Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDW83 BDW83A BDW83B BDW83C BDW83D BDW83 BDW83A BDW83B BDW83C BDW83D Value 45 60 80 100 120 45 60 80 100 120 5 15 0.5 150 3.5 -65 to +150 -65 to +150 Unit VCEO Collector-Emitter Voltage IB = 0 www.DataSheet.net/ V VCBO Collector- Emitter Voltage IE = 0 IC = 0 V VEBO IC IB Pt TJ TStg Emitter-Base .




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)